FETs, MOSFETs

The VN3205N3-G from Microchip Technology is an N-channel MOSFET rated 50 V and 1.2 A, with 1 W power dissipation, in a through-hole TO-92-3 package.

The VP2206N3-G from Microchip Technology is a P-channel MOSFET rated 60 V and 640 mA, in a TO-92-3 package.

The TP0606N3-G from Microchip Technology is a P-channel MOSFET rated 60 V and 320 mA in a TO-92-3 package.

The G075N06MI from Goford Semiconductor is an N-channel MOSFET rated 60 V and 110 A, with on-resistance below 7 mΩ at 10 V and a threshold voltage of 1.0 V to 4.0 V.

The G160P03KI from Goford Semiconductor is a P-channel MOSFET rated -30 V and -30 A, with maximum on-resistance below 16 mΩ at -10 V.

The G450N10D52 from Goford Semiconductor is an N-channel MOSFET array rated 100 V and 35 A, with on-resistance below 45 mΩ at 10 V and a threshold voltage from 1.5 V.

The G60N04D52 from Goford Semiconductor is a 40 V, 35 A MOSFET array rated 20 W (Tc), in a surface-mount 8-DFN (4.9x5.75) package, with on-resistance below 9 mΩ at 10 V and a threshold voltage of 1.0 V to 2.5 V.

The G120P03S2 from Goford Semiconductor is a -30 V, -16 A P-channel MOSFET array rated 1.4 W (Tc), in a surface-mount 8-SOP package, with on-resistance below 14 mΩ at -10 V.

The G160N04K from Goford Semiconductor is an N-channel MOSFET rated 40 V and 25 A, with on-resistance below 15 mΩ at 10 V and a threshold voltage of 1.0 V to 2.0 V.

The G700P06D5 from Goford Semiconductor is a P-channel MOSFET rated -60 V and -25 A, with maximum on-resistance below 70 mΩ at -10 V.

The G7K2N20HE from Goford Semiconductor is a 200 V, 2 A N-channel MOSFET with ESD protection, rated 1.8 W (Tc) and supplied in a surface-mount SOT-223 package, with on-resistance below 0.7 Ω at 10 V and a threshold voltage of 1 V to 2 V.

The 18N20J from Goford Semiconductor is a 200 V, 18 A N-channel MOSFET rated 65.8 W (Tc), in a through-hole TO-251 package, with on-resistance below 0.16 Ω at 10 V and a threshold voltage of 1 V to 3 V.

The G050N06LL from Goford Semiconductor is a 60 V, 5 A N-channel MOSFET rated 1.25 W (Tc), in a surface-mount SOT-23-6L package, with on-resistance below 45 mΩ at 10 V and a threshold voltage of 1.0 V to 2.5 V.

The GT013N04TI from Goford Semiconductor is a 40 V, 220 A N-channel MOSFET rated 90 W (Tc), in a through-hole TO-220 package, with on-resistance below 2.5 mΩ at 10 V and a threshold voltage of 2.0 V to 5 V.

The G900P15K from Goford Semiconductor is a -150 V, -50 A P-channel MOSFET rated 96 W (Tc), in a surface-mount TO-252 package, with on-resistance below 80 mΩ at -10 V.

The G900P15M from Goford Semiconductor is a -150 V, -60 A P-channel MOSFET rated 100 W (Tc), in a surface-mount TO-263 package, with on-resistance below 80 mΩ at -10 V.

The GT040N04TI from Goford Semiconductor is a 40 V, 110 A N-channel MOSFET rated 160 W (Tc), in a through-hole TO-220 package, with on-resistance below 4 mΩ at 10 V and a threshold voltage of 1.0 V to 2.5 V.

The G900P15T from Goford Semiconductor is a -150 V, -60 A P-channel MOSFET rated 100 W (Tc), in a through-hole TO-220 package, with on-resistance below 80 mΩ at -10 V.

The G700P06J from Goford Semiconductor is a -60 V, -23 A P-channel MOSFET rated 50 W (Tc), in a through-hole TO-251 package, with on-resistance below 70 mΩ at -10 V.

The GT045N10T from Goford Semiconductor is a 100 V, 150 A N-channel MOSFET rated 156 W (Tc), in a through-hole TO-220 package, with on-resistance below 4.8 mΩ at 10 V and a threshold voltage of 2 V to 4 V.

The G800N06H from Goford Semiconductor is a 60 V, 3 A N-channel MOSFET rated 1.2 W (Tc), in a surface-mount SOT-223 package, with on-resistance below 80 mΩ at 10 V and a threshold voltage of 0.7 V to 1.2 V.

The GT100N04D3 from Goford Semiconductor is a 40 V, 13 A N-channel MOSFET rated 23 W (Tc), in a surface-mount 8-DFN (3.15x3.05) package, with on-resistance below 10 mΩ at 10 V and a threshold voltage of 1.0 V to 2.5 V.

The GT045N10M from Goford Semiconductor is a 100 V, 120 A N-channel MOSFET rated 180 W (Tc), in a surface-mount TO-263 package, with on-resistance below 4.5 mΩ at 10 V and a threshold voltage of 2 V to 4 V.

The G1008B from Goford Semiconductor is a MOSFET array rated 100 V and 8 A (Ta) with 3 W (Ta) power dissipation, in a surface-mount 8-SOP package, with RDS(on) below 130 mΩ at 10 V and a threshold voltage of 1 V to 3 V.

The STH12N120K5-2AG from STMicroelectronics is an automotive-grade N-channel MOSFET rated 1200 V and 12 A (Tc) with 250 W (Tc) power dissipation, in a surface-mount H2Pak-2 package.

The VN0109N3-G from Microchip Technology is an N-channel MOSFET rated 90 V and 350 mA (Tj), with 1 W (Tc) power dissipation, in a through-hole TO-92-3 package.

The TP2540N3-G-P002 from Microchip Technology is a P-channel MOSFET rated 400 V and 86 mA (Tj), with 740 mW (Ta) power dissipation, in a through-hole TO-92-3 package.

The VP2110K1-G from Microchip Technology is a P-channel MOSFET rated 100 V and 120 mA (Tj), with 360 mW (Ta), in a surface-mount TO-236AB (SOT-23) package.

The VN10KN3-G from Microchip Technology is an N-channel MOSFET transistor rated 60 V and 310 mA, in a TO-92-3 package.

The GPIRGIC15DFV from GaNPower is an N-channel power GaN HEMT Integrated Circuit rated 900 V and 2.5 A (Tc), for surface mounting in an 8-DFN (8x8) package.

The DMN6068LK3-13-52 from Diodes Incorporated is a MOSFET with BVDSS of 41 V to 60 V in a TO252 package, supplied on tape and reel (T&R).

The DMN6068LK3Q-13-52 from Diodes Incorporated is a MOSFET with BVDSS of 41 V to 60 V in a TO252 package, supplied on tape and reel (T&R).

The ZXMP6A17E6TA-52 from Diodes Incorporated is a P-channel MOSFET with BVDSS of 41 to 60 V, rated 60 V and 2.3 A (Ta) with 1.1 W (Ta), in a surface-mount SOT-26 package.

The ZXMP6A17E6QTA-52 from Diodes Incorporated is a P-channel MOSFET with BVDSS of 41 to 60 V, rated 60 V and 2.3 A (Ta) with 1.1 W (Ta), in a surface-mount SOT-26 package.

The DMN6040SVTQ-7-52 from Diodes Incorporated is an N-channel MOSFET with BVDSS of 41 V to 60 V, rated 60 V and 5 A (Ta) with 1.2 W (Ta) power, in a surface-mount TSOT-26 package supplied on tape and reel.

The PSMN8R0-40HLX from Nexperia USA Inc. is a MOSFET array rated 40 V and 30 A (Ta), 53 W (Ta), in a surface-mount LFPAK56D package (SOT1205).