FETs, MOSFETs

The MCU20N06B-TP from Micro Commercial Co is an N-channel 60 V, 20 A single MOSFET in a surface-mount D-Pak package.

The MCU18N20A-TP from Micro Commercial Co is an N-channel enhancement-mode MOSFET with 200 VDS and 30 VGS ratings.

The MCPF18N20A-BP from Micro Commercial Co is an N-channel MOSFET transistor.

The SIX3139KA-TP from Micro Commercial Co is a MOSFET array rated 20 V and 600 mA (Ta) at 150 mW, in a surface-mount SOT-563 package.

The SI3415C-TP from Micro Commercial Co is a P-channel 20 V, 5 A (Ta) MOSFET rated 1 W, in a surface-mount SOT-23 package.

The MCP130N10YA-BP from Micro Commercial Co is an N-channel 100 V, 130 A (Tc) MOSFET rated 310 W, in a through-hole TO-220AB (H) package.

The MCQD08N06-TP from Micro Commercial Co is a MOSFET array rated 60 V and 8 A at 9.2 W, in a surface-mount 8-SOP package.

The SIL3439KA-TP from Micro Commercial Co is an N/P-channel MOSFET array rated 20 V, 1.2 A and 1 A at 1.25 W, in a surface-mount SOT-23-6L package.

The UM6K1N-TP from Micro Commercial Co is an N-channel MOSFET array.

The SIL04P06Y-TP from Micro Commercial Co is a P-channel 60 V, 3.5 A MOSFET rated 1.56 W, in a surface-mount SOT-23-6L package.

The MCU12P06Y-TP from Micro Commercial Co is a P-channel MOSFET rated 60 V and 12 A in a DPAK package.

The SI3139KWA-TP from Micro Commercial Co is a P-channel MOSFET transistor.

The FL6L52010L from Panasonic Electronic Components is a P-channel MOSFET rated 20 V and 2 A (Ta) with 540 mW (Ta) power dissipation, in a surface-mount WSSMini6-F1 package.

The FBG04N30BSH from EPC Space, LLC is an N-channel GaN FET (HEMT) rated 40 V and 30 A (Tc), in a 4-SMD surface-mount package.

The EPC7014UBSH from EPC Space, LLC is an N-channel GaN FET (HEMT) rated 60 V and 1 A (Tc), in a 4-SMD surface-mount package.

The EPC7003AC from EPC Space, LLC is a gallium nitride (GaN) HEMT FET rated 100 V and 5 A (COTS 4UB).

The FBG20N04ASH from EPC Space, LLC is a GaN HEMT N-channel FET rated 200 V and 4 A (Tc), in a surface-mount 4-SMD package.

The FBG04N08ASH from EPC Space, LLC is a GaN HEMT N-channel FET rated 40 V and 8 A (Tc), in a surface-mount 4-SMD package.

The FBG10N05ASH from EPC Space, LLC is a GaN HEMT N-channel FET rated 100 V and 5 A (Tc), in a surface-mount 4-SMD package.

The FBG20N18BSH from EPC Space, LLC is a GaN HEMT N-channel FET rated 200 V and 18 A (Tc), in a surface-mount 4-SMD package.

The FBG10N30BSH from EPC Space, LLC is a GaN HEMT N-channel FET rated 100 V and 30 A (Tc), in a surface-mount 4-SMD package.

IAUC120N06S5L015ATMA1 from Infineon Technologies is a MOSFET_)40V 60V)

IQE046N08LM5ATMA1 from Infineon Technologies is a TRENCH 40<-<100V

The IAUTN06S5N008ATMA1 from Infineon Technologies is a single MOSFET with 40 V and 60 V ratings.

IAUC120N06S5N022ATMA1 from Infineon Technologies is a MOSFET_)40V 60V)

The IPB95R310PFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 950 V and 17.5 A (Tc), 125 W (Tc), in a surface-mount PG-TO263-3-2 package.

The IRL40DM247XTMA1 from Infineon Technologies is an N-channel MOSFET rated 40 V and 44 A (Ta) / 211 A (Tc), 2.8 W (Ta) / 63 W (Tc), in a surface-mount MG-WDSON-8-904 package.

The IGLR60R190D1XUMA1 from Infineon Technologies is an N-channel GaN FET rated 600 V and 12.8 A (Tc), 55.5 W (Tc), in a surface-mount PG-TSON-8-6 package.

IQE022N06LM5ATMA1 from Infineon Technologies is a TRENCH 40<-<100V

IAUTN12S5N017ATMA1 from Infineon Technologies is a MOSFET_(120V 300V)

The ISZ75DP15LMATMA1 from Infineon Technologies is a single trench-type FET/MOSFET rated at 100 V or more.

The IPD029N04NF2SATMA1 from Infineon Technologies is an N-channel MOSFET rated 40 V and 24 A (Ta) / 131 A (Tc), 3 W (Ta) / 107 W (Tc), in a surface-mount PG-TO252-3 package.

IAUC120N06S5L011ATMA1 from Infineon Technologies is a MOSFET_)40V 60V)

The IGLR60R340D1XUMA1 from Infineon Technologies is an N-channel GaN FET rated 600 V and 8.2 A (Tc), 41.6 W (Tc), in a surface-mount PG-TSON-8-7 package.

The FS33MR12W1M1HB11BPSA1 from Infineon Technologies is a 1200 V MOSFET array in a chassis-mount AG-EASY1B package.

The IPTC007N06NM5ATMA1 from Infineon Technologies is an N-channel MOSFET rated 60 V, 52 A (Ta) and 454 A (Tc), with 3.8 W (Ta) and 375 W (Tc) power ratings, in a surface-mount PG-HDSOP-16-U01 package.