FETs, MOSFETs

The IQE046N08LM5CGATMA1 from Infineon Technologies is an N-channel MOSFET rated 80 V, 15.6 A (Ta) and 99 A (Tc), with 2.5 W (Ta) and 100 W (Tc) power ratings, in a surface-mount PG-TTFN-9-3 package.

The ISZ15EP15LMATMA1 from Infineon Technologies is a single trench-type FET/MOSFET rated at 100 V or more.

The FF2MR12KM1HPHPSA1 from Infineon Technologies is a MOSFET array rated 1200 V (1.2 kV) and 500 A (Tc), in a chassis-mount AG-62MMHB package.

The IMYH200R024M1HXKSA1 from Infineon Technologies is a 2000 V, 89 A N-channel SiC MOSFET rated 576 W (Tc), for through-hole mounting in a PG-TO247-4-U04 package.

The IMYH200R050M1HXKSA1 from Infineon Technologies is a 2000 V, 48 A N-channel SiC MOSFET rated 348 W (Tc), for through-hole mounting in a PG-TO247-4-U04 package.

The IPP018N10N5AKSA1 from Infineon Technologies is a 100 V N-channel MOSFET rated 33 A (Ta) and 205 A (Tc), 3.8 W (Ta) and 375 W (Tc), for through-hole mounting in a PG-TO220-3 package.

The IMYH200R012M1HXKSA1 from Infineon Technologies is a 2000 V, 123 A N-channel SiC MOSFET rated 552 W (Tc), for through-hole mounting in a PG-TO247-4-U04 package.

The IPW95R130PFD7XKSA1 from Infineon Technologies is a 950 V, 36.5 A N-channel MOSFET rated 227 W, for through-hole mounting in a PG-TO247-3-41 package.

The IMYH200R100M1HXKSA1 from Infineon Technologies is a 2000 V, 26 A N-channel SiC MOSFET rated 217 W (Tc), for through-hole mounting in a PG-TO247-4-U04 package.

The DF16MR12W1M1HFB67BPSA1 from Infineon Technologies is a MOSFET array rated 1200 V and 25 A, for chassis mounting.

The IMYH200R075M1HXKSA1 from Infineon Technologies is a 2000 V, 34 A N-channel SiC MOSFET rated 267 W (Tc), for through-hole mounting in a PG-TO247-4-U04 package.

The FF33MR12W1M1HPB11BPSA1 from Infineon Technologies is a low-power Easy MOSFET array.

The DF11MR12W1M1HFB67BPSA1 from Infineon Technologies is a 1200 V (1.2 kV) MOSFET array, for chassis mounting in an AG-EASY1B package.

The FF1MR12KM1HPHPSA1 from Infineon Technologies is a medium-power 62 mm MOSFET array.

The FF17MR12W1M1HB70BPSA1 from Infineon Technologies is a 1200 V (1.2 kV) MOSFET array, for chassis mounting in an AG-EASY1B package.

The FF17MR12W1M1HB11BPSA1 from Infineon Technologies is a 1200 V (1.2 kV) MOSFET array, for chassis mounting in an AG-EASY1B package.

The FF4MR20KM1HHPSA1 from Infineon Technologies is a 2000 V (2 kV), 280 A (Tc) MOSFET array, for chassis mounting in an AG-62MMHB package.

The FF6MR12KM1HPHPSA1 from Infineon Technologies is a medium-power 62 mm MOSFET array.

The FF1MR12KM1HHPSA1 from Infineon Technologies is a medium-power 62 mm MOSFET array.

The FF5MR20KM1HHPSA1 from Infineon Technologies is a medium-power 62 mm MOSFET array.

The FF8MR12W1M1HS4PB11BPSA1 from Infineon Technologies is a MOSFET array rated 1200 V and 100 A (Tj), 20 mW, for chassis mounting in an AG-EASY1B package.

The FF6MR12KM1HHPSA1 from Infineon Technologies is a medium-power 62 mm MOSFET array.

The FF8MR12W1M1HB70BPSA1 from Infineon Technologies is a low-power Easy MOSFET array.

The FF33MR12W1M1HB11BPSA1 from Infineon Technologies is a low-power Easy MOSFET array.

The IAUTN06S5N008TATMA1 from Infineon Technologies is a single MOSFET with 40 V and 60 V ratings.

The ISC750P10LMATMA1 from Infineon Technologies is a 100 V, 27.3 A P-channel MOSFET, for surface mounting in a PG-TDSON-8-7 package.

The STL22N60M6 from STMicroelectronics is an N-channel MOSFET rated 600 V and 10 A (Tc), 57 W (Tc), in a surface-mount PowerFLAT (5x6) HV package.

The STFU13N60M2 from STMicroelectronics is an N-channel MOSFET rated 600 V and 11 A (Tc), 25 W (Tc), in a through-hole TO-220FP package.

The STFU14N80K5 from STMicroelectronics is an N-channel MOSFET rated 800 V and 12 A in a TO-220FP package.

The STFU26N60M2 from STMicroelectronics is an N-channel MOSFET rated 600 V and 20 A (Tc), 30 W (Tc), in a through-hole TO-220FP package.

The STL110N4F7AG from STMicroelectronics is an N-channel MOSFET rated 40 V and 108 A (Tc) with 94 W (Tc) power dissipation, in a surface-mount PowerFLAT (5x6) package.

The SCTH50N120-7 from STMicroelectronics is a power transistor (PTD WBG & POWER RF).

The STL3N80K5 from STMicroelectronics is an N-channel MOSFET rated 800 V and 2.5 A in a PowerFLAT package.

The STU5N80K5 from STMicroelectronics is an N-channel MOSFET rated 800 V and 4 A in an IPAK package.

The TK25V60X,LQ from Toshiba Semiconductor and Storage is a 600 V, 25 A N-channel MOSFET with 180 W power dissipation (Tc), for surface mounting in a 4-DFN-EP (8x8) package.

The JANTX2N6898 from Microsemi Corporation is a P-channel MOSFET rated 100 V and 25 A (Tc), with 150 W (Tc) power dissipation, in a through-hole TO-3 package.