FETs, MOSFETs

The NVMJD2D7N04CLTWG from onsemi is a 40 V N-channel dual MOSFET array in an LFPAK56 package (T6, LL).

The NTMFS4C910NBT1G from onsemi is a Trench 6 N-channel single FET/MOSFET rated 30 V.

The NVMYS016N10MCLTWG from onsemi is an N-channel 100 V MOSFET rated 10.9 A (Ta) and 46 A (Tc), with 3.6 W (Ta) and 64 W (Tc) power dissipation, in a surface-mount LFPAK4 (5x6) package.

The NVMJD3D0N04CTWG from onsemi is a 40 V N-channel dual MOSFET array in an LFPAK56 package (T6, SG).

The NVMJD012N04CLTWG from onsemi is a 40 V N-channel dual MOSFET array in an LFPAK56 package (T6, LL).

The NVLJWS070N06CLTAG from onsemi is an N-channel 60 V MOSFET rated 4.4 A (Ta) and 11 A (Tc), with 2.4 W (Ta) and 15 W (Tc) power dissipation, in a surface-mount, wettable flank 6-WDFNW (2.05x2.05) package.

NTTFSS1D1N02P1E from onsemi is a 25V PT11E IN 3X3 SD PACKAGE

The NVMFWS9D6P04M8LT1G from onsemi is a P-channel 40 V MOSFET rated 17.1 A (Ta) and 77 A (Tc), with 3.7 W (Ta) and 75 W (Tc) power dissipation, in a surface-mount, wettable flank 5-DFNW (4.9x5.9) (8-SOFL-WF) package.

The NVB055N60S5F from onsemi is an N-channel 600 V MOSFET rated 45 A (Tc), with 278 W (Tc) power dissipation, in a surface-mount D²PAK-3 (TO-263-3) package.

The NVMFS9D6P04M8LT1G from onsemi is a P-channel 40 V MOSFET rated 17.1 A (Ta) and 77 A (Tc), with 3.7 W (Ta) and 75 W (Tc) power dissipation, in a surface-mount 5-DFN (5x6) (8-SOFL) package.

The BLP15H9S100GXY from Ampleon USA Inc. is a 50 V LDMOS Radio Frequency MOSFET rated 400 mA with 2 GHz operation, 19 dB gain and 100 W output power, in a 4-HSOP package (SOT1483-1).

The ART150PEY from Ampleon USA Inc. is a Radio Frequency LDMOS FET rated 135 V with 27 dB gain, in a SOT1223-2 package.

The BLP15H9S30GXY from Ampleon USA Inc. is a 50 V LDMOS Radio Frequency MOSFET rated 140 mA with 2 GHz operation, 21 dB gain and 30 W output power, in a 4-HSOP package (SOT1483-1).

The ART150PEGY from Ampleon USA Inc. is a 135 V LDMOS Radio Frequency FET with 27 dB gain, in a SOT12242 package.

The SCT055HU65G3AG from STMicroelectronics is an automotive-grade N-channel silicon carbide MOSFET rated 650 V and 30 A (Tc) at 185 W (Tc), in a surface-mount HU3PAK package.

The BSS123LT7G from onsemi is an N-channel MOSFET rated 100 V and 170 mA (Tj) with 225 mW (Ta) power in a surface-mount SOT23 package, with a 15 µA (15UA) rating.

The FDC796N from onsemi is an N-channel 30 V MOSFET rated 12.5 A (Ta) and 2 W (Ta), in a surface-mount SuperSOT-6 FLMP package.

PSMP061-60YEX from Nexperia USA Inc. is a PSMP061-60YE/SOT669/LFPAK

The NX6020CAKSAX from Nexperia USA Inc. is a MOSFET array rated 60 V and 50 V at 170 mA (Ta) and 160 mA (Ta), with 220 mW and 280 mW power ratings, in a surface-mount 6-TSSOP package (SOT363/SC-88).

The B10G2327N55DZ from Ampleon USA Inc. is a Radio Frequency MOSFET transistor supplied on reel.

The STD80N340K6 from STMicroelectronics is an N-channel 800 V, 12 A (Tc) MOSFET rated 92 W (Tc), in a surface-mount D-PAK (TO-252) package, with a typical on-resistance of 285 mΩ.

The VQ1001P-2 from Vishay Siliconix is a quad N-channel MOSFET array rated 30 V and 830 mA, with 2 W power dissipation, in a through-hole 14-DIP package.

The IAUTN12S5N018TATMA1 from Infineon Technologies is an N-channel single MOSFET for surface mounting, rated 120 V, in a PG-HDSOP-16-2 package (code 120V 300V).

The ISC16DP15LMATMA1 from Infineon Technologies is a single trench-type FET/MOSFET rated at 100 V or more.

The IAUTN06S5N008GATMA1 from Infineon Technologies is a single MOSFET with 40 V and 60 V ratings.

The IPB034N06N3GATMA2 from Infineon Technologies is a trench-type N-channel MOSFET (TRENCH 40<-<100V) rated 60 V and 100 A (Tc) with 167 W (Tc), in a surface-mount PG-TO263-7-3 package.

The IQE022N06LM5CGATMA1 from Infineon Technologies is a trench-type N-channel MOSFET (TRENCH 40<-<100V) rated 60 V, 24 A (Ta) and 151 A (Tc), dissipating 2.5 W (Ta) and 100 W (Tc), in a surface-mount PG-TTFN-9-3 package.

IAUC120N06S5N011ATMA1 from Infineon Technologies is a MOSFET_)40V 60V)

The IAUTN12S5N018GATMA1 from Infineon Technologies is an N-channel single MOSFET for surface mounting, rated 120 V, in a PG-HSOG-8-1 package (code 120V 300V).

The IGLR60R260D1XUMA1 from Infineon Technologies is a surface-mount N-channel GaN MOSFET rated 600 V and 10.4 A (Tc), dissipating 52 W (Tc), in a PG-TSON-8-7 package.

IAUC120N06S5N032ATMA1 from Infineon Technologies is a MOSFET_)40V 60V)

The IPB018N10N5ATMA1 from Infineon Technologies is a single trench-type FET/MOSFET rated at 100 V or more.

The IPD023N04NF2SATMA1 from Infineon Technologies is a surface-mount N-channel MOSFET rated 40 V, 27 A (Ta) and 143 A (Tc), dissipating 3 W (Ta) and 150 W (Tc), in a PG-TO252-3 package.

IPD038N06NF2SATMA1 from Infineon Technologies is a TRENCH 40<-<100V

The IGO60R042D1AUMA2 from Infineon Technologies is a surface-mount GaN MOSFET rated 600 V, in a PG-DSO-20-85 package.

The IPT014N10N5ATMA1 from Infineon Technologies is a surface-mount MOSFET rated 100 V and 362 A, in a PG-HSOF-8-1 package.