FETs, MOSFETs

The TSM60NC196CI C0G from Taiwan Semiconductor Corporation is a 600 V N-channel MOSFET rated 20 A (Tc) with 70 W (Tc) power dissipation, in a through-hole ITO-220 package.

The TSM051N04LCP ROG from Taiwan Semiconductor Corporation is a 40 V N-channel MOSFET rated 16 A (Ta) and 96 A (Tc), with 2.6 W (Ta) and 89 W (Tc) power dissipation, in a surface-mount TO-252 (D-Pak) package.

The TSM2538CQ RFG from Taiwan Semiconductor Corporation is a MOSFET array rated 20 V with 5.5 A (Ta), 10 A (Tc), 4.4 A (Ta) and 8 A (Tc), with 1.89 W (Ta) and 5 W (Tc) power dissipation, in a surface-mount 6-DFN (2 x 2) package.

The TSM60NC165CI C0G from Taiwan Semiconductor Corporation is a 600 V N-channel MOSFET rated 24 A (Tc) with 89 W (Tc) power dissipation, in a through-hole ITO-220 package.

The TSM250NB06LCV RGG from Taiwan Semiconductor Corporation is a 60 V N-channel MOSFET rated 6 A (Ta) and 27 A (Tc), with 1.9 W (Ta) and 42 W (Tc) power dissipation, in a surface-mount 8-PDFN (3.15 x 3.1) package.

The TSM5055DCR RLG from Taiwan Semiconductor Corporation is a dual N-channel MOSFET array rated 30 V with 10 A (Ta), 38 A (Tc), 20 A (Ta) and 107 A (Tc), with 2.2 W (Ta), 30 W (Tc), 2.4 W (Ta) and 69 W (Tc) power dissipation, in a surface-mount 8-PDFN (5 x 6) package.

The TSM300NB06LCV RGG from Taiwan Semiconductor Corporation is a 60 V N-channel MOSFET rated 5 A (Ta) and 24 A (Tc), with 1.9 W (Ta) and 39 W (Tc) power dissipation, in a surface-mount 8-PDFN (3.15 x 3.1) package.

The TSM60NC196CM2 RNG from Taiwan Semiconductor Corporation is a 600 V N-channel MOSFET rated 28 A (Tc) with 152 W (Tc) power dissipation, in a surface-mount TO-263AB (D²PAK) package.

The TSM110NB04LCV RGG from Taiwan Semiconductor Corporation is a 40 V N-channel MOSFET rated 9 A (Ta) and 44 A (Tc), with 1.9 W (Ta) and 42 W (Tc) power dissipation, in a surface-mount 8-PDFN (3.15 x 3.1) package.

The TAV1-551+ from Mini-Circuits is a Radio Frequency MOSFET amplifier rated 4 V and 15 mA, operating at 6 GHz with 8.6 dB gain and 19.8 dBm output, in a TE2769 package.

The FAM04V18DT1 from onsemi is a MOSFET array in the FETs and MOSFET arrays subfamily of transistors.

The SAC2504 from SuperApex, LLC is a GaAs pHEMT low-noise Radio Frequency MOSFET die rated 2 V, 20 mA, 40 GHz and 6 dB.

The BUK9K12-60E/1X from Nexperia USA Inc. is a FET/MOSFET array transistor.

The BUK4D72-30X from Nexperia USA Inc. is a single FET/MOSFET transistor.

The BUK4D122-20PX from Nexperia USA Inc. is a single FET/MOSFET transistor.

The BUK7510-55AL,127 from Nexperia USA Inc. is an N-channel MOSFET rated 55 V and 75 A (Ta) with 300 W (Ta), in a through-hole TO-220AB package.

The STD80N450K6 from STMicroelectronics is an N-channel MOSFET rated 800 V and 10 A (Tc), with 83 W (Tc) power dissipation, in a surface-mount D-PAK (TO-252) package.

The PH9130AL,115 from Nexperia USA Inc. is a MOSFET array.

The SCT040HU65G3AG from STMicroelectronics is an automotive-grade silicon carbide N-channel MOSFET rated 650 V and 30 A (Tc) with 221 W (Tc), in a surface-mount HU3PAK package.

The COM-10213 from SparkFun Electronics is an N-channel MOSFET rated 60 V and 30 A.

The COM-17194 from SparkFun Electronics is a small-signal NTNS2K1P021Z MOSFET.

The COM-17193 from SparkFun Electronics is a small-signal NTNS0K8N021Z MOSFET.

The FDMC8298 from onsemi is a dual N-channel MOSFET array in a surface-mount die package.

The RF5L15120CB4 from STMicroelectronics is a 120 W, 50 V Radio Frequency power LDMOS FET rated 100 mA at 1.5 GHz with 20 dB gain, in an LBB package.

The GPI4TIC15DFV from GaNPower is a power Integrated Circuit based on a power GaN HEMT.

The AOB66811L from Alpha & Omega Semiconductor Inc. is an N-channel 80 V field-effect transistor (FET).

The B11G2327N71DYZ from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, covering 2.3 to 2.7 GHz with 30 dB gain, in a 36-PQFN (12x7) package.

The B11G3338N81DYZ from Ampleon USA Inc. is a Radio Frequency MOSFET covering 3.3 to 3.8 GHz with 34 dB gain, in a 36-PQFN (12x7) package.

The MCH3478-TL-W-Z from onsemi is a P-channel MOSFET rated 30 V and 1.6 A in an SC-70FL package.

The STW35N60M2-EP from STMicroelectronics is an N-channel MOSFET rated 600 V and 26 A (Tc), in a through-hole TO-247 package.

The STFI14N80K5 from STMicroelectronics is an N-channel MOSFET rated 800 V and 12 A in an I2PAKFP package.

The STL105DN4LF7AG from STMicroelectronics is an automotive-grade N-channel 40 V MOSFET array.

The PD55003S from STMicroelectronics is a Radio Frequency MOSFET transistor rated 12.5 V, 50 mA, operating at 500 MHz with 17 dB gain and 3 W output, in a 10-PowerSO package.

The STU5N95K5 from STMicroelectronics is an N-channel MOSFET rated 950 V and 3.5 A (Tc), 70 W (Tc), in a through-hole TO-251 (IPAK) package.

The VQ3001P-E3 from Vishay Siliconix is a 30 V MOSFET array with 2 N-channel and 2 P-channel FETs in a 14-DIP package, rated 850 mA and 600 mA, 2 W.

The JANTXV2N7225 from Microsemi Corporation is an N-channel MOSFET rated 200 V and 27.4 A, with 4 W (Ta) and 150 W (Tc), in a through-hole TO-254AA package.