FETs, MOSFETs
FETs, MOSFETs
BCF060T
BeRex IncThe BCF060T from BeRex Inc is a Radio Frequency MOSFET rated 8 V and 120 mA, with 26.5 GHz, 10 dB and 25 dBm specifications, supplied as a die.
View full detailsBCP030C
BeRex IncThe BCP030C from BeRex Inc is a Radio Frequency MOSFET rated 8 V and 45 mA, covering 6 GHz to 18 GHz with 13.5 dB and 24.5 dBm specifications, supplied as a die.
View full detailsBCF080T
BeRex IncThe BCF080T from BeRex Inc is a Radio Frequency MOSFET rated 8 V and 160 mA, with 26.5 GHz, 9.7 dB and 26 dBm specifications, supplied as a die.
View full detailsBCG004
BeRex IncThe BCG004 from BeRex Inc is a 4 W GaN Radio Frequency power transistor rated 28 V and 40 mA, with 26 GHz, 10.5 dB specifications, supplied as a die.
View full detailsBCP060C
BeRex IncThe BCP060C from BeRex Inc is a Radio Frequency MOSFET rated 8 V and 90 mA, covering 6 GHz to 18 GHz with 12 dB and 27.5 dBm specifications, supplied as a die.
View full detailsBCF240T
BeRex IncThe BCF240T from BeRex Inc is a Radio Frequency MOSFET rated 8 V and 480 mA, with 26.5 GHz, 7.7 dB and 30.4 dBm specifications, supplied as a die.
View full detailsBCP080C
BeRex IncThe BCP080C from BeRex Inc is a Radio Frequency MOSFET rated 8 V and 120 mA, covering 6 GHz to 18 GHz with 11 dB and 28.5 dBm specifications, supplied as a die.
View full detailsBCP240C
BeRex IncThe BCP240C from BeRex Inc is a Radio Frequency MOSFET rated 8 V and 360 mA, covering 6 GHz to 18 GHz with 9 dB and 33 dBm specifications, supplied as a die.
View full detailsIPB95R450PFD7ATMA1
Infineon TechnologiesThe IPB95R450PFD7ATMA1 from Infineon Technologies is a 950 V, 13.3 A N-channel MOSFET rated 104 W (Tc), surface-mount, in a PG-TO263-3-2 package.
View full detailsIPA95R450PFD7XKSA1
Infineon TechnologiesThe IPA95R450PFD7XKSA1 from Infineon Technologies is a 950 V, 7.2 A N-channel MOSFET rated 30 W (Tc), through-hole, in a PG-TO220-3-313 package.
View full detailsIPA95R130PFD7XKSA1
Infineon TechnologiesThe IPA95R130PFD7XKSA1 from Infineon Technologies is a 950 V, 13.9 A N-channel MOSFET rated 33 W (Tc), through-hole, in a PG-TO220 full-pack package.
View full detailsIPD95R450PFD7ATMA1
Infineon TechnologiesThe IPD95R450PFD7ATMA1 from Infineon Technologies is a 950 V, 13.3 A N-channel MOSFET rated 104 W (Tc), surface-mount, in a PG-TO252-3 package.
View full detailsIPW95R310PFD7XKSA1
Infineon TechnologiesThe IPW95R310PFD7XKSA1 from Infineon Technologies is a 950 V, 17.5 A N-channel MOSFET rated 125 W (Tc), through-hole, in a PG-TO247-3-41 package.
View full detailsIPW95R060PFD7XKSA1
Infineon TechnologiesThe IPW95R060PFD7XKSA1 from Infineon Technologies is a 950 V, 74.7 A N-channel MOSFET rated 446 W (Tc), through-hole, in a PG-TO247-3-41 package.
View full detailsBLA9H0912LS-1200PGJ
Ampleon USA Inc.The BLA9H0912LS-1200PGJ from Ampleon USA Inc. is a Radio Frequency MOSFET rated 50 V and 200 mA, operating from 960 MHz to 1.215 GHz with 19 dB gain and 1200 W output, in an SOT539B package, supplied in a tray.
View full detailsCOM-17396
SparkFun ElectronicsThe COM-17396 from SparkFun Electronics is an NTP360N80S3Z SuperFET III MOSFET.
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