SCRs

The CS19-12HO1S-TUB from IXYS is a standard recovery SCR thyristor rated 1.2 kV and 31 A, in a surface-mount TO-263 (D2Pak) package.

The SV6025N2RP from Littelfuse Inc. is a 25 A, 600 V sensitive gate silicon controlled rectifier (SCR) for surface mounting in a TO-263 (D²Pak) package.

The BTW69-1000RG from STMicroelectronics is a 1 kV, 50 A standard recovery silicon-controlled rectifier (SCR) in a through-hole TOP3 package.

The TN2015H-6FP from STMicroelectronics is a 600 V, 20 A standard recovery silicon-controlled rectifier (SCR) in a through-hole TO-220FPAB package.

The SV6020N2QRP from Littelfuse Inc. is a 600 V, 20 A sensitive gate silicon controlled rectifier (SCR) in a surface-mount TO-263 (D²Pak) package.

The TN1625-1000G-TR from STMicroelectronics is a 1 kV, 16 A standard recovery silicon-controlled rectifier (SCR) in a surface-mount D2PAK package.

The SV6012R1QTP from Littelfuse Inc. is a 600 V, 12 A sensitive gate silicon controlled rectifier (SCR) in a through-hole TO-220AB package, high-temperature type.

The SV6016R1TP from Littelfuse Inc. is a high-temperature sensitive-gate SCR rated 600 V and 16 A, in a through-hole TO-220AB package.

The SV6020R1QTP from Littelfuse Inc. is a high-temperature sensitive gate silicon-controlled rectifier (SCR) rated 600 V and 20 A, in a through-hole TO-220AB package.

The SV6016R1QTP from Littelfuse Inc. is a high-temperature sensitive-gate SCR rated 600 V and 16 A, in a through-hole TO-220AB package.

The SV6025L1QTP from Littelfuse Inc. is a 600 V, 25 A sensitive-gate SCR (high temperature) in a through-hole ITO-220AB package.

The SV6020R1TP from Littelfuse Inc. is a high-temperature sensitive gate silicon-controlled rectifier (SCR) rated 600 V and 20 A, in a through-hole TO-220AB package.

The TS110-7A1 from STMicroelectronics is a 700 V, 1.25 A sensitive-gate silicon controlled rectifier (SCR) in a through-hole TO-92 package.

The T9S0162003DH from Powerex Inc. is a phase-control SCR module rated 1.6 kV and 3142 A, for single-chassis mounting in a TO-200 variation.

The TN2010H-6I from STMicroelectronics is a 600 V, 20 A standard-recovery silicon-controlled rectifier (SCR) with an insulated through-hole TO-220AB package.

The TS110-8A1 from STMicroelectronics is an 800 V, 1.25 A sensitive-gate SCR in a TO-92 through-hole package.

The TS420-600H from STMicroelectronics is a 600 V, 4 A sensitive gate silicon-controlled rectifier (SCR) for through-hole mounting in an IPAK (TO-251) package.

The TS1220-600T from STMicroelectronics is a 600 V, 12 A sensitive gate silicon-controlled rectifier (SCR) for through-hole mounting in a TO-220 package.

The TS1220-700B from STMicroelectronics is a 700 V, 12 A sensitive gate silicon-controlled rectifier (SCR) for surface mounting in a DPAK package.

The MCC132-18IO1 from IXYS is a dual SCR thyristor module rated 1.8 kV and 300 A, with all SCRs connected in series and a chassis mount, Y4-M6 package.

The VSKTF200-12HJ from Vishay General Semiconductor - Diodes Division is a dual SCR thyristor module rated 1.2 kV at 444 A, with all SCRs connected in series, chassis mounting and a 3-MAGN-A-PAK™ package.

LDR31650 from Powerex Inc. is a SCR MODULE 1800V 785A POW-R-BLOK

The VSKTF200-12HK from Vishay General Semiconductor - Diodes Division is a dual SCR thyristor module rated 1.2 kV at 444 A, with all SCRs connected in series, chassis mounting and a 3-MAGN-A-PAK™ package.

The VS-40TPS16PBF from Vishay General Semiconductor - Diodes Division is a standard recovery silicon-controlled rectifier (SCR) rated 1.6 kV and 55 A, in a through-hole TO-247AC package.

The VS-25TTS12PBF from Vishay General Semiconductor - Diodes Division is a 1.2 kV, 25 A silicon-controlled rectifier (SCR) in a TO-220AB package.

The VS-16TTS16STRLPBF from Vishay General Semiconductor - Diodes Division is a 1.6 kV, 16 A silicon-controlled rectifier (SCR) in a TO-263AB package.

The VS-40TPS08APBF from Vishay General Semiconductor - Diodes Division is an 800 V, 55 A silicon-controlled rectifier (SCR) in a TO-247AC package.

The VS-40TPS08PBF from Vishay General Semiconductor - Diodes Division is an 800 V, 55 A silicon-controlled rectifier (SCR) in a TO-247AC package.

The VS-ST1200C20K0P from Vishay General Semiconductor - Diodes Division is a silicon-controlled rectifier (SCR) rated 2 kV and 3080 A, in an A24 package.

The VS-ST1230C14K1P from Vishay General Semiconductor - Diodes Division is a 1.4 kV, 3200 A silicon controlled rectifier (SCR) marked (A24).

The VS-ST1200C20K0LP from Vishay General Semiconductor - Diodes Division is a silicon-controlled rectifier (SCR) rated 2 kV and 3080 A, in an A24 package.

The VS-81RIA120PBF from Vishay General Semiconductor - Diodes Division is a silicon-controlled rectifier (SCR) rated 1.2 kV and 125 A, in a TO-209AC package.

The VS-VSKH430-16PBF from Vishay General Semiconductor - Diodes Division is a silicon-controlled rectifier (SCR) module rated 430 A, in a SMAGN-A-PAK package.

The VS-ST1200C12K0P from Vishay General Semiconductor - Diodes Division is a silicon-controlled rectifier (SCR) rated 1.2 kV and 3080 A, in an A24 package.

The X0203MA 5BL2 from STMicroelectronics is a sensitive-gate SCR rated 600 V and 1.25 A, in a through-hole TO-92-3 package.

The X0203NA 1BA2 from STMicroelectronics is a sensitive-gate SCR rated 800 V and 1.25 A, in a through-hole TO-92-3 package.