SKU HBDM60V600X-7
HBDM60V600X-7
Original price
$0.14
-
Original price
$0.14
Original price
$0.14
$0.14
-
$0.14
Current price
$0.14
Availability:
in stock
The HBDM60V600X-7 from Diodes Incorporated is an H-bridge bipolar (BJT) transistor array with 1 NPN and 1 PNP transistor rated 60 V / 80 V and 600 mA / 500 mA at 200 mW, in a surface-mount SOT-363 package, supplied on tape and reel in quantities of 3K.
Base Number: HBDM60V600
Package: Tape & Reel
Standard Package: 3,000
REACH: Unaffected
MSL: Unlimited
ECCN: EAR99
HTSUS: 8541.21.0095
Discrete Semiconductor Products / Transistors / Bipolar (BJT)
Type: Bipolar (BJT)
Additional Details
COLOR:
STATUS: Active
PACKAGING: Tape & Reel
PER PACK: 3,000
MNF: Diodes Incorporated
ALT PART:
OTHER:
MSL: Unlimited
RoHS:
REACH: Unaffected
HTSUS: 8541.21.0095
ECCN: EAR99
