Search results for “MMR”

The MMR920C04ARE from Mitsumi Electric Company Ltd is a gauge pressure sensor rated -0.57 to 0.57 PSI (-3.92 to 3.92 kPa), with a 0.1" (2.5 mm) male tube, 7-bit, in a 12-SMD no-lead package with a top port.

The MMRF1019NR4 from NXP USA Inc. is a Radio Frequency MOSFET rated 50 V and 10 mA, operating at 1.09 GHz with 25 dB gain and 10 W output power, in a PLD-1.5 package.

The MMRF1315NR1 from NXP USA Inc. is a Radio Frequency MOSFET rated 28 V and 450 mA, operating at 880 MHz with 21.1 dB gain and 14 W output power, in a TO-270-2 package.

The MMRF1314GSR5 from NXP USA Inc. is a Radio Frequency MOSFET transistor rated 50 V and 100 mA, operating at 1.4 GHz with 17.7 dB gain and 1000 W peak power, in an NI-1230-4S gull-wing package.

The MMRF1312GSR5 from NXP USA Inc. is a Radio Frequency MOSFET for 960 to 1215 MHz operation with 1000 W peak power, rated 50 V, 100 mA, 1.03 GHz, 19.6 dB gain, in an NI-1230-4S gull-wing package.

The MMRF1024HSR5 from NXP USA Inc. is a dual-channel Radio Frequency MOSFET for 2.5 GHz, rated 28 V and 700 mA with 14.1 dB gain and 50 W, in an NI-1230-4LS2L package (65V).

The MMRF1316NR1 from NXP USA Inc. is a dual-channel Radio Frequency MOSFET operating at 50 V and 100 mA at 230 MHz, with 27 dB gain and 300 W output power, in a TO-270 WB-4 package.

The MMRF1009HSR5 from NXP USA Inc. is a Radio Frequency MOSFET transistor rated 50 V (110 V) and 200 mA, operating at 1.03 GHz with 19.7 dB gain and 500 W output, in an NI-780S package.

The MMRF1008HR5 from NXP USA Inc. is a Radio Frequency MOSFET transistor rated 50 V and 100 mA at 1.03 GHz, with 20.3 dB gain and 275 W output, in an NI-780H-2L package.

The MMRF1312HSR5 from NXP USA Inc. is a Radio Frequency MOSFET transistor rated 50 V, 100 mA at 1.034 GHz, with 19.6 dB gain and 1000 W output, in an NI-1230-4S package.

The MMRF1314HR5 from NXP USA Inc. is a Radio Frequency transistor covering 960 to 1215 MHz, rated 1000 W peak at 50 V.

The MMRF1006HR5 from NXP USA Inc. is a Radio Frequency LDMOS transistor rated 50 V and 150 mA at 450 MHz with 20 dB gain and 1000 W output, in an NI-1230-4H package.

The MMRF2010GNR1 from NXP USA Inc. is a Radio Frequency LDMOS transistor rated 50 V and 80 mA, operating at 1.09 GHz with 32.1 dB gain and 250 W output power, in a TO-270 WB-14 gull-wing package.

The MMRF1004NR1 from NXP USA Inc. is a Radio Frequency MOSFET rated 28 V and 130 mA, operating at 2.17 GHz with 15.5 dB gain and 10 W output, in a TO-270-2 package.

The MMRF2006NT1 from NXP USA Inc. is a W-CDMA Radio Frequency amplifier Integrated Circuit covering 1.8 GHz to 2.17 GHz, in a 24-QFN package.

The MMRF5014HR5 from NXP USA Inc. is a 50 V Radio Frequency MOSFET rated 350 mA at 2.5 GHz with 18 dB gain and 125 W output power, in an NI-360H-2SB package.

The MMRF2010NR1 from NXP USA Inc. is a 50 V Radio Frequency LDMOS transistor rated 80 mA at 1.09 GHz with 32.1 dB gain and 250 W output power, in a TO-270 WB-14 package.

The MMRF1009HR5 from NXP USA Inc. is a Radio Frequency MOSFET transistor rated 50 V (110 V) and 200 mA, operating at 1.03 GHz with 19.7 dB gain and 500 W output, in an NI-780H-2L package.

The MMRF1312HR5 from NXP USA Inc. is a Radio Frequency transistor covering 900 to 1215 MHz, rated 1000 W peak at 50 V.

The MMRF1306HR5 from NXP USA Inc. is a Radio Frequency LDMOS MOSFET transistor for 230 MHz with 50 V supply, 100 mA, 24 dB gain and 1250 W output, in an NI-1230-4H package.

The MMRF1011HSR5 from NXP USA Inc. is a Radio Frequency MOSFET transistor rated 50 V (100V) with 150 mA, operating at 1.4 GHz with 18 dB gain and 330 W output, in an NI-780S package.