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MMRF1015NR1
NXP USA Inc.
In stock
The MMRF1015NR1 from NXP USA Inc. is a Radio Frequency MOSFET rated 28 V (68V) and 125 mA at 960 MHz, with 18 dB gain and 10 W output power, in a TO-270-2 package.
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MMRF1018NR1
NXP USA Inc.
Low stock
The MMRF1018NR1 from NXP USA Inc. is a Radio Frequency MOSFET rated 50 V, 350 mA and 860 MHz with 22 dB gain and 18 W output, in a TO-270 WB-4 package (120 V).
View full detailsMMRF1008GHR5
NXP USA Inc.
In stock
The MMRF1008GHR5 from NXP USA Inc. is a pulse lateral N-channel Radio Frequency power MOSFET rated 50 V and 100 mA across 900 MHz to 1.215 GHz, with 20.3 dB gain and 275 W output, in an NI-780GH-2L package.
View full detailsMMRF1020-04GNR3
NXP USA Inc.
In stock
The MMRF1020-04GNR3 from NXP USA Inc. is a dual-channel Radio Frequency MOSFET rated 48 V and 860 mA, operating at 920 MHz with 19.5 dB gain and 100 W power, in an OM-780G-4L package (OM780-4G).
View full detailsMMRF2011NT1
NXP USA Inc.
Low stock
The MMRF2011NT1 from NXP USA Inc. is a wideband W-CDMA Radio Frequency LDMOS FET covering 728 MHz to 960 MHz with 1.6 W output, in a 24-PQFN-EP (8x8) package.
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MMRF2005NR1
NXP USA Inc.
Low stock
The MMRF2005NR1 from NXP USA Inc. is a Radio Frequency MOSFET operating at 28 V and 106 mA at 940 MHz, with 35.9 dB gain and 3.2 W output power, in a TO-270 WBL-16 package.
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MMRF1008HSR5
NXP USA Inc.
Low stock
The MMRF1008HSR5 from NXP USA Inc. is a Radio Frequency MOSFET transistor rated 50 V and 100 mA, operating at 1.03 GHz with 20.3 dB gain and 275 W output, in an NI-780S package.
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