EPC

The EPC2152ENGRT from EPC is a synchronous buck half-bridge driver Integrated Circuit rated 12.5 A, in a 12-LGA (3.85x2.59) package.

The EPC2055 from EPC is a 40 V, 29 A (Ta) N-channel GaN FET in surface-mount die form.

The EPC2218 from EPC is a 100 V, 60 A (Ta) N-channel GaN FET in die form.

The EPC2059 from EPC is a 170 V GaN MOSFET die rated at 0.009 Ω.

The EPC2219 from EPC is a 65 V, 500 mA (Ta) N-channel GaN transistor in surface-mount die form, with 3.3 Ω on-resistance and AEC-Q101 qualification.

The EPC2221 from EPC is a dual GaN MOSFET array rated 100 V and 5 A, in a surface-mount die package, with 0.11 Ω on-resistance.

The EPC2302 from EPC is a 100 V N-channel MOSFET die rated 101 A (Ta) with a 0.0019 Ω on-resistance, for surface mounting in a 7-QFN (3x5) package.

The EPC2071 from EPC is a GaN N-channel transistor rated 100 V and 64 A (Ta) with 0.0022 Ω on-resistance, in a surface-mount die form.

The EPC2067 from EPC is a GaN N-channel transistor rated 40 V and 69 A (Ta), in a surface-mount die package with 0.0015 Ω on-resistance and 14 LGA pins.

The EPC21601 from EPC is a 1-channel laser driver Integrated Circuit rated 40 V and 10 A with 3.3 V logic, a 10 to 30 V range, supplied as die.

The EPC2066 from EPC is an N-channel GaN transistor rated 40 V and 90 A (Ta), with a 0.001 Ω on-resistance, in a surface-mount die package.

The EPC2088 from EPC is a 100 V GaN transistor rated 0.0032 Ω in BMP die form.

The EPC2218A from EPC is an N-channel GaN MOSFET rated 80 V and 60 A (Ta) in a surface-mount die package, with a 0.0032 Ω specification and AEC-Q101 qualification.

The EPC2204A from EPC is an N-channel GaN MOSFET rated 80 V and 29 A (Ta) in a surface-mount die package, with a 0.006 Ω specification and AEC-Q101 qualification.

The EPC23102ENGRT from EPC is a half-bridge driver Integrated Circuit for AC motors, DC motors, DC-DC converters and general-purpose NMOS use, in a 13-WQFN-HR (3.5x5) package.

The EPC21701 from EPC is a 1-channel gallium nitride (GaN) laser driver Integrated Circuit rated at 80 V.

The UP1966E from EPC is a non-inverting half-bridge gate driver Integrated Circuit in a 12-WLCSP-B (1.6x1.6) package.

The EPC23101ENGRT from EPC is a 100 V GaN EPOWER stage with a general-purpose NMOS half-bridge driver.

The EPC2302ENGRT from EPC is a 100 V N-channel MOSFET die rated 101 A (Ta) with a 0.0019 Ω on-resistance, for surface mounting in a 7-QFN (3x5) package.

The EPC23104ENGRT from EPC is a GaN ePower stage driver Integrated Circuit rated 100 V and 10 A.

The EPC2308ENGRT from EPC is an N-channel GaN transistor rated 150 V and 48 A (Tc), with an on-resistance of 0.006 Ω, in a 7-QFN (3x5) surface-mount package.

The EPC2304ENGRT from EPC is a 200 V GaN transistor rated 0.005 Ω in a 3X5 PQFN package.

The EPC23103ENGRT from EPC is a GaN ePower stage driver Integrated Circuit rated 100 V and 20 A.

The EPC2307ENGRT from EPC is a 200 V N-channel single FET (GaN transistor) rated 48 A (Ta) for surface mounting in a 7-QFN (3x5) package, with a 0.010 Ω on-resistance.

The EPC2252 from EPC is an 80 V, 0.011 Ω GaN transistor qualified to AEC-Q101, in a 9-BGA package.

The EPC2001 from EPC is an N-channel GaN FET rated 100 V and 25 A (Ta), supplied as a surface-mount die outline.

The EPC2112ENGRT from EPC is a 10 A low-side driver Integrated Circuit in a 10-BGA (2.9x1.1) package for DC-DC converters with gallium nitride (GaN) FETs.

The EPC2619ENGRT from EPC is an 80 V GaN transistor rated 0.0033 Ω in a 6-LGA package.

The EPC2069 from EPC is a GaN FET rated 40 V and 0.002 Ω, in an 8-bump die package.

The EPC2065 from EPC is an N-channel GaN FET rated 80 V and 60 A (Ta), supplied as a surface-mount die.

The EPC2207 from EPC is an N-channel GaN FET rated 200 V and 14 A (Ta), supplied as a surface-mount die.

The EPC2070 from EPC is a GaN transistor die rated 100 V and 0.022 Ω.

The EPC21601ENGRT from EPC is a laser driver Integrated Circuit with 1 channel, operating from 1.6 V to 5.5 V, rated 40 V and 10 A with a 3.3 V output, in a 6BMPD package.

The EPC21603ENGRT from EPC is a laser driver Integrated Circuit with an LVDS channel rated 40 V and 10 A, in a 6BMPD package.

The EPC2019 from EPC is an N-channel GaN FET rated 200 V and 8.5 A (Ta), supplied as a surface-mount die.

The EPC2029 from EPC is an N-channel GaN FET rated 80 V and 48 A (Ta), supplied as a surface-mount die.