EPC

The EPC2014C from EPC is an N-channel GaN FET rated 40 V and 10 A (Ta), supplied as a surface-mount die.

The EPC2033 from EPC is an N-channel GaN FET rated 150 V and 48 A (Ta), supplied as a surface-mount die.

The EPC2036 from EPC is an N-channel GaN FET rated 100 V and 1.7 A (Ta), supplied as a surface-mount die.

The EPC2040 from EPC is a gallium nitride (GaN) N-channel FET rated 15 V and 3.4 A, supplied as a die.

The EPC2105 from EPC is an asymmetrical half-bridge GaN transistor.

The EPC8010 from EPC is a gallium nitride N-channel FET rated 100 V and 4 A, supplied as a die.

The EPC2103ENGRT from EPC is a symmetrical half-bridge GaN transistor rated 80 V.

The EPC2215 from EPC is a GaN transistor rated 200 V and 8 mΩ, supplied as a bumped die.

The EPC2101 from EPC is an asymmetrical half-bridge GaN transistor.

The EPC2104ENGRT from EPC is a dual N-channel GaN FET rated 100 V and 23 A, supplied as a die.

The EPC2032 from EPC is an N-channel GaN FET rated 100 V and 48 A (Ta), supplied as a surface-mount die.

The EPC2104 from EPC is a symmetrical half-bridge GaN transistor.

The EPC2030 from EPC is a gallium nitride N-channel FET rated 40 V and 31 A, supplied as a die.

The EPC2015C from EPC is an N-channel 40 V, 53 A (Ta) GaN FET in surface-mount die form.

The EPC2035 from EPC is an N-channel 60 V, 1.7 A (Ta) GaN FET in surface-mount die form.

The EPC2030ENGRT from EPC is an N-channel 40 V, 31 A (Ta) GaN FET in surface-mount die form.

The EPC2045 from EPC is an N-channel 100 V, 16 A (Ta) GaN FET in surface-mount die form.

The EPC2012C from EPC is an N-channel 200 V, 5 A (Ta) GaN FET in surface-mount die form.

The EPC2037 from EPC is an N-channel GaN FET rated 100 V and 1.7 A (Ta), supplied as a surface-mount die.

The EPC2018 from EPC is an N-channel 150 V, 12 A (Ta) GaN FET in surface-mount die form.

The EPC2014 from EPC is an N-channel GaN FET rated 40 V and 10 A (Ta), supplied as a surface-mount die.

The EPC2053 from EPC is an N-channel GaN FET rated 100 V and 48 A (Ta), supplied as a surface-mount die.

The EPC2051 from EPC is a gallium nitride N-channel FET rated 100 V and 1.7 A, supplied as a die.

The EPC2100ENGRT from EPC is a 30 V GaNFET array with 2 N-channel devices, rated 10 A (Ta) and 40 A (Ta) in surface-mount die form (9.5 A/38 A).

The EPC2101ENGRT from EPC is a GaN asymmetrical half-bridge FET array rated 60 V, 9.5 A and 38 A, in a surface-mount die package.

The EPC2202 from EPC is an N-channel GaN FET rated 80 V and 18 A, in a surface-mount die package.

The EPC2049ENGRT from EPC is a GaN N-channel FET rated 40 V and 16 A, supplied as a die.

The EPC2031 from EPC is a GaN N-channel FET rated 60 V and 31 A, supplied as a die.

The EPC2102ENGRT from EPC is a dual GaN N-channel FET rated 60 V and 23 A, supplied as a die.

The EPC2021 from EPC is a surface-mount GaN FET die, N-channel, rated 80 V and 90 A (Ta).

The EPC2106ENGRT from EPC is a GaN FET array with 2 N-channel devices rated 100 V and 1.7 A, supplied as a surface-mount bumped die.

The EPC2010C from EPC is an N-channel GaN FET rated 200 V and 22 A (Ta), supplied as a surface-mount die in outline form.

The EPC2021ENGR from EPC is an N-channel GaN FET rated 80 V and 60 A (Ta), supplied as a surface-mount bumped die.

The EPC2050 from EPC is an N-channel GaN FET rated 350 V and 6.3 A (Ta), supplied as a surface-mount bumped die.

The EPC2034 from EPC is a GaNFET N-channel transistor rated 200 V and 48 A (Ta), supplied as a surface-mount die.

The EPC2039 from EPC is a GaNFET N-channel transistor rated 80 V and 6.8 A (Ta), supplied as a surface-mount die.