2N5551RLRMG
The 2N5551RLRMG from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.
Base Number: 2N5551
Package: Tape & Box
Standard Package: 2,000
REACH: Unaffected
MSL: Unlimited
ECCN: EAR99
HTSUS: 8541.21.0075
Discrete Semiconductor Products / Transistors / Bipolar (BJT)
Additional Details
COLOR:
STATUS: Obsolete
PACKAGING: Tape & Box
PER PACK: 2,000
MNF: onsemi
ALT PART:
OTHER:
MSL: Unlimited
RoHS:
REACH: Unaffected
HTSUS: 8541.21.0075
ECCN: EAR99