Manuf | Datasheet |
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1MBI600U4-120 |
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Manufacturer
|
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Part Number
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1MBI600U4-120
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Product Description
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The 1MBI600U4-120 is a high-power insulated gate bipolar transistor (IGBT) module designed for industrial applications. It features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 600A, making it suitable for high-voltage and high-current operations. This module is known for its high efficiency, fast switching, and low power losses, which enhance the performance and reliability of power systems. It is typically used in applications such as motor drives, power inverters, and industrial heating systems, where robust power control and efficient energy conversion are critical. |
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SKU |
1MBI600U4120-7693147-7693147 |
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Other Description
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1MBI600U4-120 is a high-power insulated gate bipolar transistor (IGBT) module.
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Type
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Description
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---|---|
Export Control |
EAR99 |
Documentation |
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Harmonized Tariff |
0000.00.0000 |
Moisture Sensitivity Level |
1 - Unlimited |
Alternates |
1MBI600U4-120 - 1MBI600U4120 |
Packaging |
IGBT |
SVHC-Free |
REACH is Unaffected
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RoHS Compliance |
ROHS3-Compliant |
Part Series |
1MBI600U4 |
Qty Available |
1 |
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