CGH31240F

Manufacturer
Part Number
CGH31240F
Product Description
MACOM CGH31240F is a high-power RF transistor designed for applications in telecommunications, aerospace, and defense. It operates in the S-band frequency range and is optimized for high-efficiency performance. With GaN on SiC (Gallium Nitride on Silicon Carbide) technology, it provides high power density, reliability, and thermal efficiency. The CGH31240F is ideal for applications requiring high power amplification, such as radar, satellite communication, and wireless infrastructure systems
SKU
CGH31240F-7692936
Other Description
The CGH31240F by MA-COM is a high-performance, GaN HEMT (Gallium Nitride High Electron Mobility Transistor) designed for RF and microwave applications.

Qty:

Demand History
CGH31240F by MACOM Technology Solutions
Part Details
Type
Description
Export Control
DISC 3A001B3
Documentation
Harmonized Tariff
8541.29.0075
Moisture Sensitivity Level
1 Unlimited
Alternates
CGH31240F - CGH31240F-AMP
Packaging
440201
SVHC-Free
REACH Unaffected
RoHS Compliance
ROHS3 Compliant
Part Series
GaN
Qty Available
10

Request Quote


Part No. Manufacturer Detailed Description Request
PM50CLB060 Powerex Inc. MOD IPM L-SER 6PAC IPM 600V 50A Request
FCAS20DN60BB onsemi MODULE SPM FOR SRM 600V SPM20-BC Request
FSB50325S Fairchild Semiconductor INTEGRATED CIRCUIT SMART POWER MOD 1.5A SPM23-BA Request
FSB50550U onsemi INTEGRATED CIRCUIT SMART POWER MOD 2A SPM22-AD Request
FPAB50PH60 onsemi INTEGRATED CIRCUIT SMART POWER MOD 50A SPM27-HA Request
PP150B120 Powerex Inc. IGBT ASSY H-BRIDGE 1200V 150A Request
STIPNS2M50T-H STMicroelectronics SLLIMM-NANO SMALL LOW-LOSS INTEL Request
PM50RLB060 Powerex Inc. MOD IPM L-SER 7PAC 600V 50A Request
PS11033 Powerex Inc. MOD IPM 3PHASE IGBT 600V 8A Request
PS21964-4A Powerex Inc. MOD IPM 600V 15A SUPER MINI DIP Request