Manuf | Datasheet |
---|
CGH31240F |
||
---|---|---|
Manufacturer
|
||
Part Number
|
CGH31240F
|
|
Product Description
|
MACOM CGH31240F is a high-power RF transistor designed for applications in telecommunications, aerospace, and defense. It operates in the S-band frequency range and is optimized for high-efficiency performance. With GaN on SiC (Gallium Nitride on Silicon Carbide) technology, it provides high power density, reliability, and thermal efficiency. The CGH31240F is ideal for applications requiring high power amplification, such as radar, satellite communication, and wireless infrastructure systems |
|
SKU |
CGH31240F-7692936 |
|
Other Description
|
The CGH31240F by MA-COM is a high-performance, GaN HEMT (Gallium Nitride High Electron Mobility Transistor) designed for RF and microwave applications.
|
Type
|
Description
|
---|---|
Export Control |
DISC 3A001B3 |
Documentation |
|
Harmonized Tariff |
8541.29.0075 |
Moisture Sensitivity Level |
1 Unlimited |
Alternates |
CGH31240F - CGH31240F-AMP |
Packaging |
440201 |
SVHC-Free |
REACH Unaffected
|
RoHS Compliance |
ROHS3 Compliant |
Part Series |
GaN |
Qty Available |
10 |
Part No. | Manufacturer | Detailed Description | Request |
---|---|---|---|
PM50CLB060 | Powerex Inc. | MOD IPM L-SER 6PAC IPM 600V 50A | Request |
FCAS20DN60BB | onsemi | MODULE SPM FOR SRM 600V SPM20-BC | Request |
FSB50325S | Fairchild Semiconductor | INTEGRATED CIRCUIT SMART POWER MOD 1.5A SPM23-BA | Request |
FSB50550U | onsemi | INTEGRATED CIRCUIT SMART POWER MOD 2A SPM22-AD | Request |
FPAB50PH60 | onsemi | INTEGRATED CIRCUIT SMART POWER MOD 50A SPM27-HA | Request |
PP150B120 | Powerex Inc. | IGBT ASSY H-BRIDGE 1200V 150A | Request |
STIPNS2M50T-H | STMicroelectronics | SLLIMM-NANO SMALL LOW-LOSS INTEL | Request |
PM50RLB060 | Powerex Inc. | MOD IPM L-SER 7PAC 600V 50A | Request |
PS11033 | Powerex Inc. | MOD IPM 3PHASE IGBT 600V 8A | Request |
PS21964-4A | Powerex Inc. | MOD IPM 600V 15A SUPER MINI DIP | Request |