FZ600R12KE4HOSA1

Manufacturer

Infineon Technologies

Part Number

FZ600R12KE4HOSA1

Product Description

The FZ600R12KE4HOSA1 is a high-performance IGBT module designed for industrial and power electronic applications. This insulated-gate bipolar transistor (IGBT) module operates at a maximum collector-emitter voltage of 1200V and delivers a collector current of up to 600A. It is engineered for high efficiency and reliability, featuring low switching losses and optimized thermal performance. The module is housed in a robust package with advanced insulation technology, making it ideal for demanding applications such as inverters, motor drives, and power converters. The FZ600R12KE4HOSA1 ensures stable operation under heavy loads and provides excellent thermal management for extended operational life in critical systems.

SKU

FZ600R12KE4HOSA1-7693003-7693003

Other Description

IGBT Module by Infineon Technologies is a Single 1200 V 600 A 3000 W Chassis Mount Module