IXYH75N65C3DI

Manufacturer

IXYS

Part Number

IXYH75N65C3DI

Product Description

The IXYH75N65C3D1 is a 650V, 175A N-channel insulated-gate bipolar transistor (IGBT) developed by IXYS, now part of Littelfuse. Manufactured using the GenX3 IGBT process and the eXtreme-light Punch Through (XPT) design platform, this device offers high current handling capabilities, rapid switching performance, and low total energy losses. It features a low collector-emitter saturation voltage of 2.3V and a fall time of 60 nanoseconds, making it suitable for applications requiring efficient switching. The IGBT is housed in a TO-247 package and includes an anti-parallel ultra-fast diode, enhancing its performance in hard-switching environments. Typical applications encompass battery chargers, lamp ballasts, power inverters, power factor correction circuits, switched-mode power supplies, uninterruptible power supplies, and welding machines. However, as of October 20, 2024, the IXYH75N65C3D1 has been designated as obsolete.

SKU

IXYH75N65C3DI-7692990-7692990

Other Description

650V, 175A, 750W Through-Hole IGBT in a TO-247 Package (IXYH)